In0.53Ga0.47As雪崩光电二极管单光子探测器的温度特性研究

A Study of Temperature Characteristics in In0.53Ga0.47As Single Photon Avalanche Diodes Detector

摘要:

In0.53Ga0.47As雪崩光电二极管单光子探测器(SPAD)的响应覆盖短波950~1700nm,具有体积小、灵敏度高等特点,在量子通信、激光测距、激光雷达等应用有广泛前景。工作温度是影响In0.53Ga0.47As SPAD性能的重要因素,温度越高暗计数率越大,导致器件的噪声也越大。研究器件温度特性是实现暗计数抑制的重要途径。建立了数学模型来提取器件光电性能参数,通过分析吸收层、倍增层中载流子对温度的影响,获得最优器件结构参数。最后,制作了光敏面直径达到70μm的In0.53Ga0.47As SPAD芯片,并进行了封装测试。结果显示,70μm In0.53Ga0.47As SPAD在室温下的探测效率为14.2%,暗计数率为88.6kHz,噪声等效功率为3.82×10-16W·Hz-1/2,仿真结果与测试结果的拟合曲线一致。

Abstract:

In0.53Ga0.47As single photon avalanche diodes (SPAD) response wavelength of 950~1700nm. With the advantages of small size and high sensitivity, In0.53Ga0.47As SPADs are widely used in quantum communication, laser ranging and Lidar. Operating temperature is an important factor affecting the performance of In0.53Ga0.47As SPAD. The higher the temperature is, the greater the dark count rate will be, which leads to the greater noise of the device. So the study of temperature characteristics of device can provide important way to suppress dark count. This paper built a mathematical model to extract photoelectric parameters. By analyzing the influence of charge carriers in absorber layer and multiplication layer, optimized structure parameters were obtained. Finally, an In0.53Ga0.47As SPAD chip with a photosensitive surface diameter of 70μm was fabricated, packaged and tested.The results show that the detection efficiency reaches 14.2%, the dark counting 88.6kHz and the NEP 3.82×10-16W·Hz-1/2. The test results agree with the simulation.