沉积条件对室温下磁控溅射AZO薄膜微结构与光电性能的影响

Effect of Deposition Conditions on Microstructure and Photoelectric Properties of AZO Films by Magnetron Sputtering at Room Temperature

摘要:

通过控制室温下射频磁控溅射过程中不同的氩气工作气压、溅射功率和沉积时间,在石英玻璃上沉积Al掺杂ZnO(AZO)薄膜,探究了三种工艺条件对制备的AZO薄膜的微结构及光电性能的影响。所制备的AZO薄膜经500℃退火后均为六方纤锌矿结构,具有优异的透明度,在可见光范围内的平均透过率均在86%以上。在气压0.25Pa、功率200W下,溅射时间为10min时,薄膜的电阻率低至5.04×10-3Ω·cm,而溅射时间为15min时,Haacke性能指数最优,为0.314×10-3Ω-1。结果表明,磁控溅射制备的AZO薄膜的晶体结构、方阻和透过率等特性与制备过程中的气压、功率和时间密切相关,通过评价性能指数可指导优化AZO薄膜的制备工艺。

Abstract:

Al-doped ZnO (AZO) thin films were deposited on quartz glass by RF magnetron sputtering at room temperature with controlled working pressure, power and deposition time. The effects of three processing conditions on the microstructure and photoelectric properties of AZO thin films were investigated. After annealing at 500℃, all AZO films have hexagonal wurtzite structure and excellent transparency. The average transmittance of AZO films in visible light range is above 86%. At a pressure of 0.25Pa with the power of 200W, the resistivity of the thin film deposited for 10min is as low as 5.04×10-3Ω·cm, while the best performance index is 0.314×10-3Ω-1 for 15min. The results show that the crystal structure, square resistance and transmittance of AZO films prepared by magnetron sputtering are closely related to the working pressure, power and time during the preparation process, and the performance indexes can guide the optimization of AZO films preparation.