ZnSnO/AgNW双层透明电极的制备及性能研究

Investigation on preparation and performance of ZnSnO/AgNW bi-layer transparent electrodes

摘要:

为制备适用于新一代柔性光电子器件应用需求的柔性透明电极,利用旋涂银纳米线和磁控溅射ZnSnO薄膜相结合的方案,实现ZnSnO/AgNW双层透明电极的制备的制备。采用X射线衍射仪、扫描电子显微镜对形貌和相结构进行了分析,用紫外可见分光光度计和四探针测试仪分别对ZnSnO/AgNW双层透明电极的电学性能和光学性能进行了表征,结果表明,ZnSnO/AgNW双层透明电极的电学和光学性能优异,在透过率为88.1%时,方电阻为12.3 Ω/□,其品质因子高达231。在5.0 mm的曲率半径下,对ZnSnO/AgNW双层透明电极进行1000次弯曲测试,其电阻仅仅增加了13%,表现出了优异的柔性性能。此外,该双层电极还具有优异的粘附性以及抗氧化性,在20次胶带试验后方电阻保持不变,在高温高湿环境下储存一段时间后,其电阻仍有保持着初始值。该透明电极可用于柔性可穿戴电子产品。

Abstract:

In order to prepare flexible transparent electrode suitable for the flexible optoelectronic device application, ZnSnO/AgNW bi-layer thin films are prepared by the processes of spin coating and magnetron sputtering.SThe morphology and phase structure of ZnSnO/AgNW bi-layer films are analyzed by X-ray diffractometer and scanning electron microscope. The electrical and optical properties of Z bi-layer films are characterized by UV-visible spectrophotometer and four-probe tester, respectively. The ZnSnO/AgNW bi-layer films display excellent electrical and optical properties. Under the optimal preparation conditions, the sheet resistance of bi-layer films is 12.3 Ω /□ at transmittance of 88.1%, while the figure of merit is as high as 231. The resistance of the ZnSnO/AgNW bi-layer films is increased by only 13% after 1000 bending cycles at a curvature radius of 5.0 mm, indicating the good flexibility.SIn addition, the electrode has excellent adhesion and oxidation resistance. The resistance is unchanged after 20 taping cycles, and retains its initial resistance after being stored in high temperature and humidity for a period of time. The ZnSnO/AgNW bi-layer transparent electrode can be used in flexible wearable electronics.