GaN基Micro-LED的外量子效率研究

Investigation of External Quantum Efficiency of GaN-based Micro-LEDs

摘要:

基于氮化镓材料的微型发光二极管(micro-LED)已逐渐成为可见光通信和下一代显示器等许多光电器件的主要发光源。由非辐射复合和量子限制斯塔克效应(QCSE)引起的低外量子效率(EQE)是微型发光二极管应用开发过程中的主要瓶颈。文章讨论了微型发光二极管低EQE的成因,分析了其物理特性,并提出了改善其EQE的优化方法。

Abstract:

GaN-based micro-sized light-emitting diodes (micro-LED) has gradually become the main light source in many optoelectronic devices such as visible light communications and next-generation displays. Low external quantum efficiency (EQE),caused by non-radiative recombination and quantum confined Stark effect (QCSE),is the main bottleneck in applications of micro-LEDs. In this report, the reasons for low EQE of micro-LEDs are discussed, and the physical characteristics of micro-LEDs are analyzed and several optimal methods are suggested to improve EQE.