InPBi薄膜材料的结构性能和光学性能研究

Structural and Optical Property Study for InPBi Thin Films

摘要:

室温下,InPBi表现出强而宽的光致发光光谱,其宽光谱特性来自于材料中的PIn反位深能级和与Bi相关的深能级。该特性使得InPBi有希望应用于制备光学相干层析扫描(医学成像技术)系统中的超辐射光源。本文利用透射电子显微镜和三维原子探针研究了InPBi薄膜材料的结构性能,发现Bi原子在InPBi薄膜中的分布极不均匀,在InPBi/InP界面出现了Bi的富集区,从该区域沿[001]方向出现了Bi的纳米面,此纳米面位于(110)平面上。这种Bi原子的富集分布阻碍了PIn反位参与的载流子复合过程,对InPBi的光学性能有显著的影响。本研究为制造光学相干层析扫描系统的超辐射发光二极管提供了一定的理论基础。

Abstract:

InPBi exhibits a strong and broad photoluminescence spectrum at room temperature. The broad spectrum originates from the PIn antisite and Bi-related deep levels. This optical property makes InPBi promising for super-luminescent light source for optical coherence tomography system (medical imaging technology). TEM and APT are used to discuss the structural property of InPBi thin films. The results show that Bi atoms distributes quite non-uniform in InPBi thin films. There is a Bi-rich region at the InPBi/InP interface. Besides, there is a Bi-rich nano-wall in (110) face. This distribution of Bi atoms inhabit the carrier recombination processes in relation to PIn antisite deep level. This work provides references for fabricating super-luminescent diodes applied in optical coherence tomography system.