GaAs衬底上β-Ga2O3纳米点阵薄膜的MOCVD制备

Preparation of β-Ga2O3 Nanodot Array Films on GaAs Substrates by Metal-Organic Chemical Vapor Deposition

摘要:

将热氧化与MOCVD工艺相结合,总结了一种在本征GaAs衬底上进行β-Ga₂O₃纳米点阵薄膜制备的工艺,该工艺不涉及金属催化剂与复杂刻蚀,工艺更为简单。使用扫描电子显微镜对所制备薄膜的形貌特征进行了表征与分析,发现所制备的纳米点阵薄膜呈现五方的柱状结构。对所制备样品进行了X射线衍射、拉曼振动、光致发光谱的测试,结果表明薄膜的晶体质量随着MOCVD生长温度与Ⅵ/Ⅲ比的提高而得到优化。使用有限元法(FEM)仿真验证了β-Ga₂O₃纳米点阵薄膜制备的高陷光特点。

Abstract:

Ga₂O₃ nanodot array films on intrinsic GaAs substrates have been presented by combining thermal oxidation and MOCVD technology, which does not involve metal catalysts or complex etching. Morphological features of the prepared films were characterized and analyzed by scanning electron microscope (SEM). It is found that the β-Ga₂O₃ nanodot array films show a pentagonal columnar structure. X-ray diffraction, Raman vibration, and photoluminescence were performed on the prepared samples, and the results show that the crystal quality of the films is optimized with the increase of MOCVD growth temperature and Ⅵ/Ⅲ ratio. The finite element method (FEM) simulations verify that the β-Ga₂O₃ nanodot array films are highly light trapping. The nanodot array films prepared by this process show high specific surface area with high light trapping.