SnO2缓冲层对VO2薄膜微观结构与相变性能的影响

Effect of SnO2 Buffer Layer on Microstructure and Phase Transformation Properties of VO2 Thin Films

摘要:

利用电子束蒸发法在Si衬底上制备了不同厚度的SnO₂缓冲层,并使用磁控溅射法制备出上层氧化钒薄膜,研究了SnO₂缓冲层厚度对于氧化钒薄膜微观结构、相组成以及相变性能的影响。结果表明,引入具有四方金红石结构的SnO₂缓冲层后,上层氧化钒薄膜的结晶性变好,随着SnO₂缓冲层厚度的增加,沉积的氧化钒薄膜中V⁴⁺含量逐渐提高,氧化钒薄膜的平均晶粒尺寸增大,成膜质量变好；相变锐度有所降低,热滞回线宽度减小。这些结果表示SnO₂缓冲层的引入有利于在硅衬底上生长高质量且相变性能优越的VO₂薄膜。

Abstract:

SnO₂ buffer layers with different thicknesses were prepared on silicon substrate by electron beam evaporation, and their influence on the microstructure, phase composition and phase transformation properties of the upper vanadium oxide films deposited by magnetron sputtering were investigated. Experimental results show that the lattice of tetragonal-rutile structure SnO₂ matches well with that of vanadium oxide films, leading to the thin films contains more V⁴⁺. When the thickness of SnO₂ buffer layer increases, accompanied by the appearance of more homogeneous sizes of SnO₂ crystallite, larger grain sizes, narrower thermal hysteresis loops and sharper phase transition can be observed for the deposited VO₂ films. Accordingly, this work indicates that the addition of SnO₂ buffer layer with optimal thickness is beneficial to the growth of high-quality VO₂ films with excellent phase transition performance.