基于氧化锌的紫外探测器研究进展

Research Progresses of Ultraviolet Photodetector Based on Zinc Oxide

摘要:

氧化锌(ZnO)是一种天然的宽禁带半导体材料,其理论上的禁带宽度为3.37eV,近年来已经成为制备紫外探测器件的热门材料之一。然而,由于ZnO材料的本征缺陷,直接制备的紫外探测器件总是存在响应率低、暗电流大、响应速度慢等问题。为了获得更好的紫外探测性能,各种可行的器件改善和修饰方法被提出。文章从元素掺杂、表面修饰和异质结构造等三个方面评述了提升ZnO紫外探测器件性能的典型方法,分析了这些方法存在的问题,并展望了未来高性能紫外探测器的发展方向。

Abstract:

Zinc oxide (ZnO) is a natural semiconductor with a theoretical bandgap of 3.37eV. It has become one of the most popular materials in the application of ultraviolet photodetectors in recent years. However, due to the intrinsic defects of ZnO, the directly prepared ZnO ultraviolet photodetectors always display low responsivity, high dark current and slow response speed. To obtain the better performance of ultraviolet photodetectors, various feasible methods for performance improvement and modification are proposed. In this paper, the typical methods to improve the performance of ZnO ultraviolet photodetectors are reviewed from the three aspects of element doping, surface modification and hetero-structure construction, the existing problems of these methods are pointed out and the potential development of high-performance ultraviolet photodetectors in the future is prospected.