Fe掺杂GaN中Fe相关缺陷发光特性研究

The effect of different Fe states on the optical properties in Fe-doped GaN

摘要:

利用氢化物气相外延方法制备了厚膜Fe掺杂GaN。通过掺杂 GaN 样品发光与掺杂浓度，温度和激发功率的变化规律，探究红外和蓝光与掺杂的Fe离子的内在关联性。光致激发光谱表明红外和蓝光相关的Fe离子相关缺陷能级跃迁特征及过程。此外，在较高掺杂浓度下，红外发光将被抑制，与此同时蓝光峰强度显著增加。在较高位错密度材料中，相比于蓝光强度，红外发光强度增加更加显著。进一步研究阐明Fe离子不同缺陷结构相关辐射复合过程，并且GaN中本征缺陷结构以及位错对相关能级跃迁具有重要影响。

Abstract:

The thick Fe-doped GaN was prepared by the hydride vapor phase epitaxy method. Through the changes of luminescence properties with doping concentration, temperature and excitation power, the intrinsic correlation between infrared and blue emissions with the doped Fe ions is explored. The photoluminescence excitation spectra show the characteristics and process of the energy level transition of infrared and blue emission which are related with Fe ion. The infrared luminescence will be suppressed at higher doping concentrations, while the blue emission intensity will increase significantly. On the other hands, comparing to the blue emission, the infrared emission intensity increases more significant at higher dislocation density. Furthermore, the radiation recombination processes related to different states of Fe ions were analyzed, and the intrinsic defect and dislocations in GaN have an important influence on the Fe related energy level transitions.