基于0.18µm SiGe BiCMOS工艺的25-Gbps宽带可变增益放大器

A 25-Gbps Wideband Variable Gain Amplifier based on 0.18µm BiCMOS Process

摘要:

本文介绍了一种基于0.18 μm SiGe BiCMOS工艺的，可应用于高速通信的25-Gbps可变增益放大器(VGA)。可变增益放大器由核心电路、输出缓冲器和偏置电路组成。核心电路采用改进型Gilbert结构，增大了电路的增益动态范围；同时采用电感峰化技术克服大寄生电容来实现宽带特性。后仿真结果表明，该可变增益放大器的最大增益为20.15 dB，-3 dB带宽(BW)为26.8 GHz，可支持高达25 Gbps的数据速率。该可变增益放大器在3.3 V电源电压下的功耗为26.4 mW，芯片大小为1120 μm×1167 μm。

Abstract:

This paper presents a 25-Gbps variable-gain amplifier (VGA) in 0.18 μm SiGe BiCMOS for high-speed communications. The proposed VGA compactly consists of a VGA core, an output buffer and a bias circuit. The core circuit of the VGA adopts an improved Gilbert structure to increase the gain dynamic range of the circuit; at the same time, the VGA achieves the broadband characteristic by utilizing inductive peaking technique to overcome the large parasitic capacitances. The post-simulation results showed that the VGA exhibited a maximum gain of 20.15 dB and a -3-dB bandwidth (BW) of 26.8 GHz, which can support up to 25-Gbps data rate. The VGA consumed a power of 26.4 mW from 3.3V supply voltage and occupied an area of 1120 × 1167 .