基于顶栅调控界面的石墨烯高增益光电探 测器

High gain Graphene Photodetector Based on top-gated interface couplin g effect

摘要:

本文利用Silvaco TCAD软件对石墨烯进行合理建模，复现了不同掺杂程度石墨烯 在实验上得到的双极性曲线。进而对顶栅调控石墨烯-硅光电导型光电探测器进行仿真，发 现顶栅可通过施加电压调控石墨烯的掺杂，内部的载流子类型及数量来改变了石墨烯和硅之 间的内建电势，实现提高增益的目的。这与我们在实验上制备得到的离子凝胶栅控石墨烯- 硅光电导型光电探测器在红外波段下增益的提升相吻合。本工作对红外光电探测器的增益优 化具有指导意义。

Abstract:

In this paper, Silvaco TCAD is used to establishe graphene model, and the experimental bipolar curves of graphene with different doping degrees are reproduced. The simulation results show that applied voltage of top-gate can change the built-in potential between graphene and silicon by adjusting the doping of graphene, so as to enhance the gain of graphene-silicon photodetector. This is consistent with the gain enhancement of the ionic gel gated graphene-silicon photoconductive photodetectors fabricated experimentally in the infrared band. This work has guiding significance for the gain optimization of infrared photodetectors.