不同过渡热沉封装微盘腔半导体激光器热分析

Thermal Analysis of Different Transition Heat Sink Sealed Micro Disk Cavity Semiconductor Lasers

摘要:

为了降低微盘腔半导体激光器工作时有源区的温度，提升封装的可靠性。基于ANSYS Workbench对不同过渡热沉封装的蜗线型微盘腔半导体激光器进行了热力模拟，得到了器件工作时的温度分布云图以及热应力、热应变分布云图。结果显示SiC封装在引入最小热应力的同时有源区温度有明显降低，较传统过渡热沉AlN陶瓷片、WCu10封装分别降低了2.18℃、3.078℃。石墨烯、CVD金刚石散热效果最好，但是引入的热应力约为AlN陶瓷片封装器件的两倍，是SiC封装器件的2.06倍。SiC封装可以有效的降低微盘腔半导体激光器工作时的有源区温度、减少封装应力、器件应变，提高器件的可靠性和散热能力。

Abstract:

In order to reduce the temperature of the active area of the micro disk cavity semiconductor laser and improve the reliability of the package.Use ANSYS Workbench to simulate the temperature distribution, thermal stress and thermal strain distribution of the micro disk cavity semiconductor laser with different transition heat sink package.The results show that the minimum thermal stress is introduced into the SiC package, and the temperature of the active region is also significantly reduced, which is 2.18 ℃ and 3.078 ℃ lower than the traditional transition heat sink AlN ceramic chip and WCu10 package, respectively. Graphene and CVD diamond have the best heat dissipation effect, but the thermal stress is about twice as high as AlN packaging and 2.06 as high as SiC packaging.SiC packaging can effectively reduce the temperature of active region, package stress and package strain, improve the reliability and heat dissipation of semiconductor laser .