基于顶栅调控界面的石墨烯高增益光电探测器

High Gain Graphene Photodetector Based on Top-Gated Interface Coupling Effect

摘要:

利用Silvaco TCAD软件对石墨烯作为新一代二维半导体材料具有的光学电学特性进行仿真建模,计算得到了不同掺杂类型石墨烯的转移特性曲线。进而对基于顶栅调控的石墨烯-硅光电导型光电探测器进行了建模与仿真,发现顶栅电压可以通过调控石墨烯载流子类型及浓度来改变石墨烯与硅异质结的内建电势,实现提高增益的目的。基于此制备了栅控石墨烯-硅光电探测器并测得与仿真结果一致的规律,实验中该器件在1550nm波段展现出良好的光电性能。研究结果对红外光电探测器的性能优化具有指导意义。

Abstract:

In this paper, Silvaco TCAD was used to establish the model to simulate the optical and electrical properties of graphene, and the experimental bipolar curves of graphene with different doping degrees were calculated. Furthermore, modeling and simulation of graphene-silicon photoconductive photodetector based on top gate regulation were carried out. The simulation results show that the top gate voltage can change the built-in potential of graphene-silicon heterojunction by regulating the type and concentration of graphene carriers, so as to improve the gain of graphene-silicon photodetector. Then the gate-controlled graphene-silicon photodetector was prepared and it is consistent with the gain enhancement of the graphene-silicon photoconductive photodetectors fabricated at 1550nm band.