基于0.18μm SiGe BiCMOS工艺的25Gb/s宽带可变增益放大器

A 25Gb/s Wideband Variable Gain Amplifier Based on 0.18μm BiCMOS Process

摘要:

介绍了一种基于0.18μm SiGe BiCMOS工艺的,可应用于高速通信的25Gb/s可变增益放大器(VGA)。该放大器由核心电路、输出缓冲器和偏置电路组成,核心电路采用改进型Gilbert结构,增大了电路的增益动态范围；同时采用电感峰化技术克服大寄生电容来实现宽带特性。后仿真结果表明,该可变增益放大器的最大增益为20.15dB,-3dB带宽(BW)为26.8GHz,可支持高达25Gb/s的数据速率,在3.3V电源电压下的功耗为26.4mW,芯片大小为1120μm×1167μm。

Abstract:

A 25Gb/s variable-gain amplifier (VGA) based on 0.18μm SiGe BiCMOS process was introduced for high-speed communications. The proposed VGA consists of a VGA core, an output buffer and a bias circuit. The core circuit of the VGA adopts an improved Gilbert structure to increase the gain dynamic range of the circuit. Meanwhile, the VGA achieves the broadband characteristic by utilizing inductive peaking technique to overcome the large parasitic capacitances. The post-simulation results show that the VGA exhibits a maximum gain of 20.15dB and a -3dB bandwidth (BW) of 26.8GHz, which can support a data rate up to 25Gb/s. The VGA consumes a power of 26.4mW from 3.3V supply voltage and occupied an area of 1120μm×1167μm.