千赫兹量级窄线宽半导体激光器研究进展

Research Progresses of Laser Diodes with kHz Linewidth

摘要:

窄线宽半导体激光器由于其高单色性、低频率噪声、高可调谐性等优点,广泛应用于高速相干光通信、分布式传感、激光雷达等领域。随着高品质因子(Q)光学谐振腔、硅光异构集成芯片等技术的发展,窄线宽半导体激光器近十年经历了革命式发展,线宽压缩至千赫兹(kHz)量级,甚至到亚千赫兹量级。文章阐述了千赫兹量级窄线宽半导体激光器的最新进展,针对不同压缩线宽机制的窄线宽激光器进行了分类介绍,深入讨论了优化耦合系数、减少外腔损耗等对窄线宽激光器性能的影响,并针对未来应用需求展望了千赫兹量级窄线宽激光器在进一步压缩线宽、提升输出光功率方面的发展方向。

Abstract:

Narrow linewidth semiconductor laser has been widely used in high-speed coherent optical communication, distributed sensing, lidar and other fields due to its high monochromatic, low frequency noise and high tunability. With the development of high quality factor (Q) optical resonator, silicon optical isomerization integrated chip and other technologies, the narrow linewidth semiconductor laser has experienced revolutionary development in the last decade. The linewidth has been compressed to the order of kHz or even sub-kHz. In this paper, the latest developments of kHz narrow linewidth semiconductor laser are described, and the narrow linewidth lasers with different linewidth compression mechanisms are classified. The influence of optimizing coupling coefficient and reducing external cavity loss on the performance of narrow linewidth laser is discussed. The development trends such as further compressing the line width and improving the output optical power are prospected.