晶圆低温直接键合技术研究进展

Research Progress of Wafer Low Temperature Direct Bonding Technology

摘要:

晶圆低温直接键合技术与传统键合方式相比具有对晶片及器件损伤小、无中介层污染、无需外部电场辅助等优势,在功率型半导体光电及电力电子器件、大功率固体激光器、MEMS、光电集成等领域具有巨大的应用潜力。文章从低温直接键合技术的发展历程入手,重点介绍了湿法疏水键合、湿法亲水键合和等离子体活化键合的物理化学机制。系统阐述了低温直接键合的工艺流程和键合强度的表征方法,探讨了低温直接键合的技术发展趋势,并对低温直接键合工艺的改善和创新应用拓展进行了展望。

Abstract:

Compared with traditional bonding methods, wafer direct bonding at low temperature has the advantages of low bonding loss, no intermediate layer pollution and no external electric field assistance. It has important application potential in power semiconductor optoelectronic and power electronic devices, high power solid-state lasers, MEMS, optoelectronic integration and other fields. In this paper, the physical and chemical mechanisms of hydrophobic bonding, hydrophilic bonding and plasma-activated bonding are introduced emphatically based on the development of low temperature direct bonding technology. The technological processes of low temperature direct bonding and the characterization method of bond strength are described systematically, the development trend of low temperature direct bonding technology is discussed, and the improvement and innovative application of low temperature direct bonding technology are prospected.