掺镓单晶硅太阳电池和组件的光致衰减性能研究

Investigation on Light-Induced Degradation Effect in Gallium Doped Monocrystalline Silicon Solar Cell and Module

摘要:

分别使用掺镓和常规掺硼单晶硅片制备了太阳电池与组件,对电池进行了光照和空焊处理,再采用Halm电池电性能测试仪测试了两种单晶硅太阳电池和组件在光照和空焊实验前后的光电性能。实验结果表明,在相同光照条件下,采用掺镓单晶硅片所制太阳电池的光衰率比用掺硼单晶硅片的低0.91%。空焊后的掺镓单晶硅太阳电池各项光电性能参数的一致性没有出现明显变化,这有利于减少太阳电池之间的失配损失。还发现掺镓单晶硅太阳电池组件的CTM(cell to module)值高于掺硼单晶硅太阳电池组件的CTM值。总之,掺镓单晶硅太阳电池能更好地抑制光致衰减效应,并减小串焊工艺对太阳电池光电性能的影响,获得更高的太阳电池组件功率。

Abstract:

The solar cells and modules were fabricated with gallium doped and boron-doped monocrystalline silicon wafers respectively. Light-induced degradation (LID) treatment and soldering without welding rod were conducted on the two kinds of solar cells. The photovoltaic performance changes of the solar cell and modules induced by LID and soldering without welding rod were tested with Halm I-V tester. Test results indicate that, the LID ratio of the Ga-doped silicon solar cells was 0.91% lower than that of the B-doped samples. Moreover, after the soldering without welding rod, the consistency of the optoelectronic performance of the Ga-doped silicon wafer has little change, and its cell-to-module (CTM) ratio is higher than that of the B-doped monocrystalline silicon solar cell module. In conclusion, Ga-doped monocrystalline silicon solar cells can better suppress the photo-attenuation effect, reduce the influence of the series welding process on the photoelectric performance of solar cells, and obtain higher power of solar cell component.