基于湿法腐蚀工艺的高性能黑硅光电探测器

High Performance Black Silicon Photodetector Based on Wet Etching Process

摘要:

采用基于硝酸/氢氟酸/磷酸/硫酸混合液的湿法腐蚀工艺,实现了高吸收效率的黑硅结构的制备与工艺集成,获得了具有近红外响应增强效果的黑硅PIN光电探测器,并与未集成黑硅的PIN光电探测器的性能参数进行了对比测试。测试结果显示,黑硅光电探测器在1060nm波长下的响应度达到0.69A/W(量子效率80.7%),较未集成黑硅的器件提高了116%；黑硅探测器暗电流小于8nA,响应时间小于8ns,电容小于9pF,与未集成黑硅的器件相当。得益于工艺兼容性,所采用的黑硅技术具有广泛应用于硅基近红外PIN,APD,SPAD,SPM等光电探测器的潜力,可显著提高器件的响应率、量子效率、响应速度、击穿电压温度系数等性能。

Abstract:

The nearly infrared enhanced PIN photodetector with high absorption efficiency black silicon micro-structure was fabricated by wet etching process based on nitric acid/hydrofluoric acid/phosphoric acid/sulfuric acid mixture. And the parameters of the fabricated photodetector were tested and compared with that of the PIN photodetector without black silicon. Test results show that the quantum efficiency of the black silicon photodetector reaches 80.7% and its response rate reaches 0.69A/W at 1060nm, which is 116% higher than that of the non-integrated black silicon devices. The dark current of the black silicon detector is less than 8nA, the response time is less than 8ns, and the capacitance is less than 9pF, which is equivalent to that of the non-integrated black silicon devices. Due to the process compatibility, the black silicon technology has the potential to be widely used in silicon-based near-infrared PIN, APD, SPAD, SPM and other photodetectors, so as to significantly improve the response rate, quantum efficiency, response speed, temperature coefficient of breakdown voltage and other performance.