半导体碳纳米管的长度分选及其薄膜晶体管性能研究

Research on Length Sorting of Semiconducting Carbon Nanotubes and the Performance of Thin Film Transistors

摘要:

半导体型碳纳米管薄膜的高质量制备及其优化对于碳纳米管基电子器件具有重要意义。其中半导体型碳纳米管的长度是影响薄膜质量的重要因素之一。文章通过聚[9-(1-辛酰基)-9H-咔唑-2,7-二基](PCz)成功制备了高纯度半导体型碳纳米管溶液,经过循环沉积工艺,高效地降低了分散液中的短碳管含量,有效地提升了半导体型碳纳米管的平均长度,在此基础上通过标准工艺成功制备了高性能碳纳米管薄膜晶体管。结果显示,优化后的长碳纳米管溶液制备的薄膜晶体管具有优异的电学性能,其开关比高达10⁷,迁移率高达34cm²·V-1·s-1,比相应的短管性能提升了3倍。

Abstract:

The high-quality preparation and optimization of semiconductor-based carbon nanotube films is of great significance for carbon nanotube-based electronic devices. The length of semiconducting carbon nanotubes is one of the important factors affecting the thin film. In this paper, high-purity semiconducting carbon nanotube solution was successfully prepared by poly[9-(1-octanoyl)-9H-carbazole-2,7-diyl] (PCz). Through a cyclic deposition process, the short carbon nanotubes were effectively removed, and the average length of semiconductor carbon nanotubes was improved. On this basis, high-performance carbon nanotube thin film transistors were successfully prepared through standard process. The results show that the thin film transistor prepared by the optimized long carbon nanotube solution presents excellent electrical properties, with an on-off ratio of up to 10⁷ and a mobility of up to 34cm²·V-1·s-1, which is 3 times higher than that of short tubes.