量子阱材料折射率低偏振相关性研究

Study on Polarization Dependence of Refractive Index of Quantum Well

摘要:

分析了阱宽、垒高和应变对量子阱材料TE模和TM模折射率的影响,并剖析了其中的物理机理。研究表明:对于量子限制效应带来的量子阱折射率偏振相关性,阱宽越小或垒高越高,折射率偏振相关性越大。压应变增大时,折射率偏振相关性增大,张应变可以克服量子限制效应带来的折射率偏振影响。对于不同阱宽和垒高的量子阱,均存在合适的张应变量使折射率偏振相关性最小,且阱宽越小或垒高越高所需的张应变量越大。根据以上分析,提出量子阱材料折射率低偏振相关设计方法,并据此设计出C波段(1530~1565nm)内折射率低偏振相关(小于0.03)的量子阱材料In0.49Ga0.51As/In0.77Ga0.23As0.5P0.5。研究结果有助于优化设计光网络中关键器件。

Abstract:

The effects of well width, barrier height and strain on the refractive index of TE mode and TM mode of quantum well are analyzed and the physical mechanisms were dissected. The results show that for the polarization dependence of refractive index caused by quantum confinement effect of quantum well, the smaller the well width or the higher the barrier height, the larger the polarization dependence of refractive index. When the compressive strain increases, the polarization dependence of refractive index increases. Tensile strain can overcome the influence caused by quantum confinement effect, for quantum well structures with different well widths and barrier heights, there are suitable tensile strains to minimize the polarization dependence of refractive index. The smaller the well width or the higher the barrier height, the larger the tensile strain is required. Based on the above analysis, a design method is proposed to realize low polarization dependence of refractive index of quantum well and a quantum well In0.49Ga0.51As/In0.77Ga0.23As0.5P0.5 with low polarization dependence of refractive index (＜0.03) within C-band (1530~1565nm) is designed. The research result is helpful for the optimization design of some key devices in optical network.