CMOS图像传感器抗电离辐照加固技术研究

Radiation-hardened Methodologies For CMOS Image Sensor

摘要:

太空环境中的电离辐射会导致 CMOS 图像传感器性能退化,甚至造成永久性损毁。本文对CMOS 图像传感器抗电离辐照加固技术进行了研究,从版图设计、电路设计方面提出相应的抗辐射策略,并进行了总剂量和单粒子试验,试验结果表明采用抗辐照加固技术设计制作的CMOS 图像传感器具备抗总剂量和单粒子辐照能力,当总剂量达到100k Rad(Si)和单粒子辐照总注量1x10⁷p/cm²时,器件的关键指标变化符合预期要求。

Abstract:

The ionization of the outer space would degrade CMOS image sensor even burn at the worst. In this paper, it is represented the radiation hardened design technique from layout to circuit designing CMOS image sensor. A series of experiments have been carried out on the samples and the results show the performance of the CMOS image sensor realizing total-dose resilience up to 100 krad(Si) and single-event effect resilience up to 1x10⁷p/cm² meeting the radiation hardened design expectation.