氧化镓生长模拟中的流场与反应参数优化研究

Optimization of Flow Field and Reaction Parameters in the Growth Simulation of Gallium Oxide

摘要:

建立了用于生长直径为15.24cm(6inch)的Ga₂O₃材料的氢化物气相外延(HVPE)生长腔的二维几何模型,对Ga₂O₃材料的生长进行了数值模拟。依次优化了GaCl进气速度、O₂进气速度、喷口到衬底间的距离等关键参数,在较高生长速率下使衬底上的Ga₂O₃膜厚相对均匀度达到7.02%。此外,对仿真中不同的反应活化能设置进行了对比实验,发现活化能参数虽然对平均生长速率有明显影响,但是对样品的生长速率分布及均匀性影响不大。

Abstract:

A two-dimensional geometry model of hydride vapor phase epitaxy (HVPE) growth chamber with the diameter of 15.24cm (6inch) was established to simulate the growth of Ga₂O₃ material. The key parameters were optimized, such as the inlet velocity of GaCl and O₂ and the distance between the nozzle and the substrate. The uniformity of the thickness of Ga₂O₃ film on the substrate reached 7.02% at a relatively high growth rate. In addition, simulation experiments were carried out under different reactive activation energy parameters. It is found that although the activation energy parameters affect the average growth rate significantly, they have little influence on the optimal design of growth rate distribution and uniformity of the samples.