SnSe薄膜的两步法制备与光电性能研究

Preparation and Photoelectric Performance of SnSe Films Based on Two-step Process

摘要:

采用电子束蒸镀预制层,再对预制层进行硒化的两步法工艺,通过调节硒化温度和退火时间,在玻璃基底上成功制备了SnSe薄膜。利用X射线衍射、拉曼光谱、扫描电子显微镜、紫外可见近红外分光光度计等研究了SnSe薄膜的物相、微观形貌和光学性能。结果表明,在450℃下硒化退火60min可制备出纯相的多晶SnSe薄膜,其带隙为0.93eV。在功率为200mW/cm²的980nm激光照射下,对SnSe薄膜进行了光电响应特性测试,通过曲线模拟得出所制薄膜的响应时间和恢复时间分别为62和80ms。

Abstract:

The Sn prefabricated layer was evaporated by electron beam and then selenized by Se powder, then SnSe films were successfully prepared on the glass substrate by adjusting the selenation temperature and annealing time. The phase, microstructure and optical properties of SnSe films were studied by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and UV-Vis-NIR spectrophotometer. The results show that the pure phase polycrystalline SnSe films with a band gap of 0.93eV can be prepared by annealing selenide for 60min at 450℃. Under the irradiation of a 980nm laser with a power of 200mW/cm², the photoelectric response characteristics of SnSe film were tested, and the response time and recovery time of the prepared film were 62ms and 80ms, respectively, obtaining through curve simulation.