InAs量子点低温盖层对其发光特性的影响

Photoluminescence Characteristics of InAs Quantum Dots with Low Temperature Cap Layers

摘要:

采用金属有机物化学气相淀积(MOCVD)技术生长了InAs量子点及不同组分和厚度的量子点低温盖层,采用光致荧光光谱(PL)和时间分辨荧光发射谱(TRPL)研究了量子点在不同低温盖层下的荧光发光性质。对比了常规方法和速率调制外延(FME)法生长GaAs低温盖层的量子点质量,结果表明,FME法生长低温盖层的量子点荧光发射谱光强更强且发光寿命达到0.6ns,明显优于普通方法生长低温盖层的量子点发光寿命。

Abstract:

Metalorganic chemical vapour deposition (MOCVD) was employed to grow InAs quantum dots (QDs) and low temperature QDs caps with different composition and thickness, and photoluminescence (PL) and time-resolved photoluminescence (TRPL) was used to study the characteristics of QDs with different cap layers. Flow-rate modulation epitaxy (FME) and conventional methods were utilized to grow low temperature cap of InAs QDs. Experimental results indicate that the PL intensity of QWs is stronger when the cap was grown by FME, and its TRPL life time reaches 0.6ns, which is much longer than the samples prepared by the conventional method.