温度和材料参数对InAsxSb1-x俄歇复合寿命影响的数值分析

Studying Influence of Temperature and Material Parameters on InAsxSb1-x Auger Recombination Life by Numerical Analysis

摘要:

工作在中长波的红外探测器可被广泛应用在空间成像、军事和通信等领域,锑基InAsSb材料由于其特殊的性质是制作长波非致冷光子探测器的理想材料。俄歇复合寿命是影响探测器性能的重要因素之一,文章采用Matlab软件模拟研究了n型和p型InAsxSb1-x材料的俄歇复合寿命随温度、As组分及载流子浓度的变化。对确定的As组分,可通过优化工作温度及载流子浓度获得较长的俄歇复合寿命。当载流子浓度为3.2×10¹⁵cm-3、温度为200K时,n型InAs0.35Sb0.65的俄歇复合寿命最大为2.91×10-9s。

Abstract:

Infrared detectors working in the medium and long wavelength can be widely used in the fields of space imaging, military, communication and so on. Antimony-based InAsSb materials are ideal materials for fabricating long-wave uncooled photon detectors due to their special properties. Auger recombination lifetime is one of the important factors affecting the performance of detectors . In this paper, Auger recombination lifetime of n and p type InAsxSb1-x materials changing with temperature, As composition and carrier concentration is studied by Matlab software. For the determined As component, the longer Auger composite life can be obtained by optimizing working temperature and carrier concentration. When the carrier concentration is 3.2×10¹⁵cm-3 and the temperature is 200K, the maximum Auger lifetime of n-type InAs0.35Sb0.65 is 2.91×10-9s.