不同应力增透膜对半导体激光器性能的影响

Effect of Different Facet Coating Stress on The Performance of Laser Diodes

摘要:

采用离子辅助电子束蒸发方法,通过改变制备Al₂O₃增透膜时基底的温度,在边发射半导体激光器前腔面上分别制备了张应力和压应力增透膜。比较了张应力、压应力两种不同增透膜对半导体激光器性能的影响。结果表明:在10A注入电流下,当半导体激光器的增透膜为张应力状态时,输出功率为8.11W；当半导体激光器的增透膜为压应力状态时,输出功率为7.74W。可见,在半导体激光器前腔面制备张应力增透膜有效地提高了半导体激光器的斜率效率。

Abstract:

The ion-assisted electron beam evaporation was used to fabricate laser diodes with tensile stress and compressive stress anti-reflective film coated on the front facet by changing the temperature of the substrate when preparing the Al₂O₃ film. The effects of two different anti-reflection coatings on the performance of laser diodes were compared. The results show that output power of the laser diode with tensile stress anti-reflective coating was 8.11W while the laser diode with compressive stress anti-reflective coating was 7.74W at 10A injection current. Therefore, fabricating tensile stress anti-reflective coated on the laser diode facet can more effectively increase the slope efficiency of laser diodes.