基于银纳米薄膜欧姆接触的高波长选择性紫外探测器研究

High Wavelength-selective Ultraviolet Detector Based on Ag-nanofilm Ohmic Contact

摘要:

常规的半导体紫外探测器波长响应范围宽,而紫外光的应用具有较强的波长选择性,如320nm波段的紫外光在医学方面有重要的应用,因此,具有高波长选择性的紫外探测器的研制有重要意义。文章采用GaN基p-i-n探测器结构,通过在p区覆盖银纳米薄膜作为欧姆接触层和波长选择透射层,成功制备了对320nm波段紫外光高选择性探测的紫外探测器,器件性能如下:70nm银层的紫外光透射率峰值超过30%,器件在-5V偏压下的暗电流为10-12A量级,响应峰值为0.06A/W,响应峰发生在325nm处,光谱响应峰半高宽约30nm。

Abstract:

Conventional semiconductor ultraviolet detectors have a wide wavelength response range. However, applications of ultraviolet light are generally highly sensitive to specific wavelength range, such as 320nm ultraviolet light is used in medical light therapy. Therefore, development of wavelength-selective ultraviolet detectors is of great significance. Using GaN-based p-i-n ultraviolet detectors with Ag-nanofilm as ohmic contact and wavelength-selective transmission layer, ultraviolet detector highly selective to the 320nm band ultraviolet light is successfully fabricated. The peak value of ultraviolet light transmittance with 70nm silver layer is higher than 30%. The dark current of the device at -5V is of the order of 10-12A. The peak responsivity of the device reaches 0.06A/W at 325nm, and the full width at half maximum is about 30nm.