N/Al共掺ZnO透明导电薄膜的制备及光电性能研究

Preparation and Photoelectric Properties of N/Al Co-doped ZnO Transparent Conducting Thin Films

摘要:

采用射频磁控溅射和退火处理方法在普通玻璃基底上制备了N、Al共掺的ZnO薄膜。利用扫描电子显微镜(SEM)、X射线衍射仪(XRD)、四探针电阻测试仪和紫外-可见光光谱及X射线光电子能谱(XPS)等测试手段,分析了溅射功率对薄膜表面形貌结构及光电性能的影响。研究结果表明:不同溅射功率下所制备的薄膜均为具有c轴择优取向的六角纤锌矿结构,在可见光范围内,平均透过率都超过了85%；在溅射功率为140W条件下,N、Al共掺的ZnO薄膜显示出p型导电特性。

Abstract:

N/Al co-doped ZnO films were deposited on glass substrate by radio frequency(RF) magnetron sputtering and annealing process. The influence of sputtering power on the surface morphology and photoelectric properties of the films was studied by means of scanning electron microscope(SEM), X-ray diffraction (XRD), four-probe resistance tester, UV-visible spectrum and X-ray photoelectron spectroscopy(XPS). The results show that the films prepared under different sputtering powers are hexagonal wurtzite structures with preferred orientation of c-axis, and the average transmittance exceeds 85% in visible light range. N/Al co-doped ZnO films perpared with the sputtering power of 140W show p-type conductivity.