The electrical characteristics of triple-junction GaAs cell subjected to damage were studied. Based on the equivalent circuit model, a damage analysis model of GaAs triple-junction cell was established with the photovoltaic effect theory. The effects of damages at different locations on the output voltage, power and efficiency of the cells were discussed in detail. The results show that the hot melt damage of the top junction has the greatest impact on the electrical characteristics of the battery, which will directly reduce the photoelectric conversion efficiency by 17.23%. And the hot melt damage appears at the middle cell or the bottom cell will reduce the photoelectric conversion efficiency by 4.23% and 2.42%, respectively.