射频溅射功率对非晶Zn-Sn-O薄膜性能的影响

Effect of Radio Frequency Sputtering Power on Properties of Zinc-Tin-Oxide Thin Films

摘要:

使用射频磁控溅射法,基于不同溅射功率(58、79、116、148和171W)条件在玻璃基底上室温制备了Zn-Sn-O(ZTO)薄膜,并探讨了溅射功率对薄膜的结构、电学性能和光学性能的影响。结果表明,提高溅射功率有助于提升薄膜的沉积速率；XRD分析表明不同溅射功率条件下制备的ZTO薄膜均具备稳定的非晶结构；随着溅射功率的增加,薄膜的电阻率下降,光学吸收边“红移”(光学禁带宽度从3.77eV减小到3.62eV)；整体来看,在58~148W溅射功率范围内制备的ZTO薄膜具备较好的可见光透明性,其在380~780nm可见光范围内的平均透过率均超过85%。

Abstract:

Zinc tin oxide (ZTO) thin films were deposited on glass substrates by radio frequency (RF) sputtering with various sputtering power (58,9,116,8 and 171W) at room temperature. The effect of sputtering power on their structural, electrical and optical properties was systematically investigated. It is indicated that with increasing sputtering power, the deposition rate improves significantly. X-ray diffraction (XRD) analysis reveals that all the films are amorphous structure. The resistivity decreases with the increase of the sputtering power, and the optical band gap red shifts from 3.77 to 3.62eV with increasing sputtering power. The ZTO films within the sputtering power range of 58~148W exhibit high transparency of over 85% in the visible range (380~780nm).