SiNx/SiOxNy叠层结构防潮能力的研究

Research on Moisture Barrier Property of SiNx/SiOxNy Stacks Structure

摘要:

研究了等离子体增强化学气相沉积(PECVD)工艺参数对SiN_x及SiO_xN_y防潮能力的影响,并测试了SiN_x/SiO_xN_y叠层薄膜的水汽渗透速率(WVTR)。实验结果表明:单层SiN_x薄膜和SiO_xN_y薄膜都存在临界厚度,当膜厚大于临界值时,继续增大厚度不会明显改善薄膜的WVTR。当沉积温度从50℃提高到250℃,SiN_x薄膜的WVTR从0.031g/(m²·day)降至0.010g/(m²·day)。SiO_xN_y沉积时,增大N₂O通入量对薄膜的WVTR影响不明显,但可以有效改善薄膜的弯曲性能。最后,4个SiN_x/SiO_xN_y叠层膜的WVTR下降到了4.4×10-4g/(m²·day)。叠层膜防潮能力的显著提升归因于叠层结构可以有效解耦层与层之间的缺陷,延长水汽渗透路径。

Abstract:

The influences of process parameters on the moisture barrier properties of SiN_x and SiO_xN_y prepared by plasma enhanced chemical vapor deposition (PECVD) were investigated, and the water vapor permeation rate (WVTR) of SiN_x/SiO_xN_y stacks film was tested. The results show that both the single-layer SiN_x film and the SiO_xN_y film have a critical thickness. When the film thickness is greater than the critical value, increasing the thickness does not significantly improve the WVTR of the film. When the deposition temperature increased from 50℃ to 250℃, the WVTR of the SiN_x film decreased from 0.031g/(m²·day) to 0.010g/(m²·day). When SiO_xN_y is deposited, increasing the N₂O flux does not affect the WVTR of the film, but it can effectively improve the bending properties of the film. Finally, the WVTR of the four stacks SiN_x/SiO_xN_y films fell to 4.4×10-4g/(m²·day). The significant improvement in moisture barrier capacity of the film is attributed to the fact that the stackstructure can effectively decouple the defects between the layers and extend the water vapor permeation path.