Ar气流量对磁控溅射AZO导电薄膜红外透光性能的影响

Influence of Ar Flow Rate on Infrared Transmittance of AZO Conductive Film by Magnetron Sputtering

摘要:

采用射频磁控溅射法在超白玻璃衬底上制备出了近红外波段高透光性的AZO透明导电薄膜,用XRD、SEM和发光光度计研究了不同Ar气流量对AZO薄膜的结晶、电学性能和红外透光性能的影响。发现在室温、不同Ar气流量条件下制备出的AZO薄膜在300~1100nm内的透过率相差不大,均大于86%,而在1100~2500nm内透过率变化明显。在Ar气流量为10cm³/min时,制备出的AZO薄膜在1100~2500nm内透过率仅为62.7%,而在Ar气流量增大至40cm³/min时,在1100~2500nm内透过率则增加到86.6%。分析表明,AZO薄膜红外透光性能的增加是因为Ar气流量增大时,薄膜电学性能变差,电阻率增加,载流子浓度下降,对红外波段光的自由载流子吸收减弱。

Abstract:

High infrared (IR) transmittance AZO films were prepared by magnetron sputtering on glass substrates with different Ar flow rates. The results show that the transmittance of AZO films with different Ar flow rates in 300~1100nm is all over 86%. However, Ar flow rate has great impact on transmittance within 1100~2500nm. The transmittance in 1100~2500nm increases from 62.7% to 86.6% when Ar flow rate grows from 10 to 40cm³/min. It is because that the increase of Ar flow rate makes AZO films have lower electricity resistivity which leads to lower carrier concentration and weaker carrier absorption in IR wavelength range.