Abstract:A type of 320×256 radiation-hardened solar-blind ultraviolet focal plane arrays was designed, and the work was mainly focused on the design of read out integrated circuit (ROIC), offset points of the integral switch, eptiaxy structure and process of the chips. Gamma and neutron irradiation tests were performed on the samples, and the results show that the designed FPA samples can realize radiation hardening with a total ionizing dose of 150krad (Si) and neutron exposure of 1×1013n/cm2, thus the effectiveness of radiation hardened design is verified.