选择区域外延生长中掩模介质表面Ga原子的迁移特性

Migration Characterization of Ga Adatoms on Dielectric Surface in Selective Area Growth

摘要:

选择区域外延生长(SAG)技术是微纳尺度GaN基发光器件的主要制备方法之一。在选择区域外延生长中,Ⅲ族金属原子在掩模介质表面的迁移行为对微纳器件的形貌及特性有非常重要的影响。利用金属有机化学气相沉积(MOCVD)系统研究了选择区域外延生长中Ga原子在掩模介质表面上的迁移特性,得到了不同反应腔压力和生长温度下Ga原子在掩模介质表面的迁移长度,且在保持其他生长条件不变的情况下,适当降低反应腔压力或提高生长温度可提高Ga原子的迁移长度。

Abstract:

Selective area epitaxial growth technique (SAG) is one of the main methods for the fabrication of microscale GaNbased LEDs. The migration behavior of metal atoms of group Ⅲ on the surface of dielectric mask during the selective area epitaxial growth plays an importmant role in the morphology and characteristics of microscale GaN devices. In this paper, the migration characteristics of Ga atoms on the surface of dielectric mask in selective area epitaxial growth were studied in metalorganic chemical vapor deposition (MOCVD) system. The migration lengths of Ga atoms on the surface of dielectric mask were obtained under different pressure and growth temperature of the reaction chamber. Keeping other growth conditions unchanged, the migration length of Ga atoms increases with the growth temperature and decreases with the reaction pressure.