High power semiconductor laser with wavelength of 940nm is an important pumping source of Yb∶YAG laser. In order to prepare high output power 940nm semiconductor lasers, the fabrication process of the chip is optimized based on the asymmetric superconducting cavity waveguide epitaxial structure. On the side of the chip, an isolated double trench is introduced to achieve effective suppression of lateral current expansion. By optimizing the spacing and depth of the double trench, as well as by utilizing the long cavity length structure, the performance of the device is improved. Finally, the maximum output power of the 940nm semiconductor laser reaches 20.3W under the condition of room temperature and without active heat dissipation.
