高速InGaAs光电探测器γ辐照实验研究

Research on γ Irradiation of High-Speed InGaAs Photodetector

摘要:

高速InGaAs光电探测器在天基平台中的应用正逐渐广泛,研究空间辐射环境对高速InGaAs光电探测器性能的影响有着重要意义。采用实时测试法,研究了不同剂量及不同剂量率的γ辐照对高速InGaAs光电探测器响应度、3dB带宽及暗电流特性的影响,通过器件性能实时测试分析发现,器件的暗电流随辐照剂量或剂量率的增加而增大,而响应度、3dB带宽基本不变。

Abstract:

As increasing demands for high-speed InGaAs photodetector in space application, it is more significant to research the effect of space radiation on high-speed InGaAs photodetector. Using the real-time measurement, the variation in the responsivity, 3dB bandwidth, dark current of high-speed InGaAs photodetector irradiated with different γ radiation dose and rate was studied. By anaylzing the real-time measurement data, it shows that the dark current rise with the increasing of radiation dose or rate, but the responsivity and saturation optical power slightly change under different γ radiation dose and rate. The results indicate that γ radiation has less effect on high-speed InGaAs photodetector.