退火温度对SnF2掺杂SnO2薄膜性能的影响

Influence of Annealing Temperature on the Properties of SnF2 Doped SnO2 Thin Films

摘要:

利用电子束蒸镀技术在石英玻璃上沉积SnF2掺杂SnO2（FTO）薄膜。研究了不同退火温度对FTO薄膜结构和光电性能的影响。研究结果表明:升高退火温度可促进FTO薄膜中晶粒逐渐变大,结晶度变好,同时薄膜在可见光范围内的透射率随着退火温度升高逐渐增加,吸收边发生蓝移,禁带宽度显著变宽,这是由于载流子浓度增加导致的Moss-Burstein效应。升高温度时,薄膜电学性能随着退火温度升高有了很大改善,700℃退火处理后得到电阻率低至2.74×10-3Ω·cm、载流子浓度为2.09×1020?cm-3、迁移率为9.93cm2·V-1·s-1的FTO薄膜。

Abstract:

SnF2-doped SnO2 thin films (FTO) were deposited on quartz glass substrates by e-beam evaporation. The effects of annealing temperatures on the structure and optoelectronic properties were investigated.The results show that the increasing of annealing temperature promotes the growth and crystallinity of FTO thin films, in addition, the average values of transmittance in the visible region get increased, and the adsorption was found to blue-shift. The increment in band gap was attributed to Moss-Burstein effect resulted from the high carrier concentration in FTO thin films annealed at higher temperatures. The electrical properties of thin film were improved a lot with increasing the annealing temperature. The resistivity, carrier concentration and carrier mobility were achieved to be 2.74×10-3 Ω·cm, 2.09×1020 cm-3 and 9.93 cm2·V-1·s-1 for the FTO thin films annealed at 700 ℃, respectively.