高功率980nm半导体激光器有源区制备中的Ⅴ/Ⅲ比优化

Optimization of Ⅴ/Ⅲ Ratio in Active Region for the Fabrication of High Power 980nm Semiconductor Lasers

摘要:

高质量的MOCVD外延材料是研制高性能半导体光电器件的基础。通过制作简单的量子阱结构,利用光荧光系统进行快速表征,得到Ⅴ/Ⅲ比不但会影响PL的强度,还会影响片内均匀性的结论。根据标准偏差统计法,确定了InGaAs量子阱外延的最佳Ⅴ/Ⅲ比为35。基于优化的外延参数,制备了波长为980nm的半导体激光器,在15A脉冲电流下,腔面未镀膜时器件的平均输出功率为9.6W,中心波长为977.2nm。研究结果为半导体激光器的研制提供了一种快速有效的方法。

Abstract:

High quality epitaxial material is the precondition of high performance semiconductor optoelectronic devices. With the test of PL photoluminescence system, it is found that both the intensity and uniformity are affected by Ⅴ/Ⅲ ratio after making the characterization of a convenient quantum well structure. With the standard deviation statistic algorithm, it is concluded that luminous intensity comes to be the highest when the Ⅴ/Ⅲ ratio is 35 during the growth of quantum wells. Based on the optimization of process parameters, high-power 980nm laser diodes have been fabricated. For the uncoated devices, the average output power and central wavelength is 9.6W and 977.2nm respectively at a 15A pulsed current.