The effects of the junction drive-in and diffusion techniques for fabrication of guard-ring after ion implantation on the yield of silicon reach-through APD (Si-APD) have been investigated in this paper. The reverse breakdown voltage and dark current of the device fabricated under different process conditions have been compared. The results show that the yield of the devices fabricated by the junction drive-in technique after implantation has been up to 94% at 3 h@1 100 ℃, while the yield of the devices fabricated by the diffusion technique is no more than 65%. There is little difference between the two process conditions about dark current and reverse breakdown voltage. Obviously, from the comparison of the two kinds of process, the guard-ring fabricated by The junction drive-in technique after ion implantation for fabricating the guard-ring is more suitable for Si-APD process over the diffusion technique.
