Cl掺杂对n-Cu2O的光电性能的影响

Effect of Cl Doping on Photoelectrical Properties of n-type Cu2O

摘要:

在酸性溶液中利用恒电位沉积法在导电玻璃（ITO）上沉积Cu2O薄膜,并以KCl为添加剂对其进行掺杂,采用场发射扫描电子显微镜（FESEM）和X射线衍射谱（XRD）等手段研究了氯掺杂对Cu2O表面形貌和晶体结构的影响。紫外-可见吸收光光谱确定得到的Cu2O和Cl掺杂Cu2O（Cu2O-Cl）样品的禁带宽度分别为1.98和1.95eV。根据表面光电压谱和相位谱,掺杂前后的Cu2O均为n型,Cu2O-Cl有更强的表面光电压响应。场诱导表面光电压谱结果表明未掺杂Cl的Cu2O在加负偏压时易形成反型层;氯离子的掺杂引入杂质能级可以提高n型导电性。光电化学性能测试发现,以Cu2O、Cu2O-Cl为光阳极组成的光化学太阳电池,在大气质量AM 1.5G、100mW/cm2标准光强作用下光电转换效率分别为0.12%和0.51%。 更多还原

Abstract:

Cuprous oxide (Cu2O) films and Cl-doped Cu2O were prepared in acidic solution by means of electrodeposited potentiostatically on ITO. The morphology and crystalline phase of obtained films were characterized by field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD). By analyzing UV-vis absorbance spectra, the band gap of prinstine Cu2O and Cl-Cu2O was obtained as 1.98eV and 1.95eV, respectively. According to the results of surface photovoltage spectrum (SPS) and phases spectrum (PS), Cu2O and Cu2O-Cl were both n-type. The surface photovoltage response intensity of Cl-doped Cu2O was more stronger. Results of field-induced SPS show that appling negative bias can be expected to result in the formation of an inversion layer in pristine Cu2O. The dopants of Cl in the Cu2O crystal can improve the stability of n-type conductivity. Cl-doped Cu2O base photoelectrochemical cell shows that 0.51% of photo electricity conversion efficiency is achieved under 100mW/cm2 simulated AM 1.5G sunlight.