基于斜台面工艺的背照式GaN雪崩探测器制备

Preparation of Back-illuminated Beveled Mesa GaN Avalanche Photodiodes

摘要:

对基于斜台面工艺的背照式pin型GaN紫外雪崩探测器制备进行了简要介绍。通过斜台面制作工艺的对比优化研究,完成了GaN紫外雪崩探测器的低损伤斜台面制作,器件测试结果表明,高质量斜台面能够有效抑制雪崩探测器的表面提前击穿,器件暗电流特性优良,获得了超高雪崩增益的GaN紫外雪崩探测器。 更多还原

Abstract:

In this work, the preparation of back-illuminated beveled mesa GaN UV avalanche photodiodes was studied. Based on the research of beveled mesa fabrication technology, high quality beveled mesa was achieved through optimizing the main device processes. I-V characteristic test results prove that beveled mesa can suppress the surface pre-breakdown effectively, furthermore, GaN avalanche photodiodes with low dark current and high internal gain are attained successfully.