Abstract:Based on the structure of InAs / GaAs quantum dot intermediate band solar cells(QD-IBSC) , carrier drift-diffusion theory and mathematic model, the relationship between voltage-current characteristics and thickness of i-region and also effects of i-region, temperature and n-type doping on the characteristics of solar cell were analyzed quantitatively for improving the efficiency of quantum dot solar cells. Theoretical simulation can be presented as follows: firstly, the conversion efficiency reaches a theoretical maximum value of 14.01% with the i-region thickness of 400nm; secondly, it is found that the temperature has an effect on the voltage-current characteristics of quantum dot solar cells, which reflects that the open-circuit voltage reduces significantly with the temperature range of 300~350K; thirdly, the n-type doping has a potential on suppressing the quantum dot layer.
