大阵列CCD光刻图形拼接技术研究

Study on Lithography Pattern Stitching of Large Array CCD

摘要:

针对大阵列CCD工艺制作过程中光刻大面积图形曝光的需求，提出了一种适用于光刻拼接的图形补偿方法。图形拼接处进行相反的补偿设计0.3μm“凹陷”，曝光时拼接交叠0.3μm。光刻后，图形拼接处平滑、自然过渡，图形整体上拼接自然，较好地解决了光刻大面积图形曝光存在的固有图形缺陷问题，改善了光刻曝光图形的质量。

Abstract:

For the exposure requirements of large area lithography patterns, a graphical compensation method was proposed suitable for lithography stitching in CCD fabrication process. In the stitching points, opposite compensation design of “depression” of 0.3μm and stitching overlap of 0.3μm in the exposure was applied. After the lithography, the stitching pattern is smooth and transits naturally, and the problem of pattern defect can be solved in the large area lithography pattern, thus the quality of lithography patterns is effectively improved.