硅片湿法清洗工艺缺陷控制研究

Study on Defect Control of Silicon Wafer Wet Cleaning Process

摘要:

采用光学表面分析（OSA）方法，研究了硅片湿法清洗工艺中清洗液SC1的浓度配比和温度对硅片表面颗粒和缺陷的影响。研究结果表明，当NH4OH浓度较小，则硅片表面颗粒数增加，而缺陷减少；当SC1温度降低为45℃时，硅片表面颗粒增加数仅为60每片（颗粒尺寸大于等于0.2μm），且无缺陷产生。优化工艺参数后，明显改善了硅片湿法清洗工艺的质量。

Abstract:

The effects of SC1 concentration ratio and temperature on the surface particles and defects of silicon wafers were studied with optical surface analysis (OSA) technology. The results show that when the concentration of NH4OH decreases, the surface particles of the silicon wafer increase, while the defects decrease. When the temperature of SC1 decreases to 45℃, the increase of particles on the surface is only 60 per tablet(≥0.2μm) and no defects present.