不同晶向GaSb晶片表面化学组分及形貌分析

Analysis on Chemical Constituents and Surface Morphology of the Gallium Atimonide Wafers with Different Crystal Orientations

摘要:

对相同条件下制备的不同晶向的锑化镓抛光晶片表面化学组分进行了XPS测试比较，结果表明（110）GaSb晶片表面的氧化程度最为严重，表面极为粗糙；有极性的（111）GaSb晶面由于Ga—Sb价键存在于衬底内部，反而氧化程度较低，表面较光滑。分析比较了GaSb晶面表面化学组分与形貌的关系。

Abstract:

Surface chemical constituents of polished gallium atimonide (GaSb) wafers prepared under the same conditions were investigated by XPS with different crystal orientations. The results indicate that the surface of（110）GaSb wafer is oxided most and exhibits the largest roughness. As Ga-Sb bonds are in the bulk of the substratrate, （111）GaSb wafers are oxided least and have smooth surfaces. The relationship between chemical constituents and surface morphology was analyzed by comparisons.