Abstract:By using triple-layer polysilicon，burried channel, double-layer metal process, a 1/2 inch interline CCD image sensor with 823(H)×592(V) elements was successfullly developed. By adopting a vertical overflow drain principle, blooming was suppressed in domestic device design for the first time, and no significant loss in transfer efficiency was observed in the horizontal register. It is indicated that the horizontal driving frequency can reach 30MHz, the peak response appears at 550nm, and the dynamic range reaches 62.6dB.
