短波红外In0.53Ga0.47As探测器的实时γ辐照研究

Study on Real-time γ Irradiation Effect on Short Wavelength Infrared In0.53Ga0.47As Detectors

摘要:

空间应用短波红外InGaAs探测器的性能不断提高，对辐照损伤越来越敏感。通过实时测试的方法，研究了不同剂量和不同剂量率的γ辐照对晶格匹配In0.53Ga0..47As探测器电流-电压特性的影响。发现在反向偏压下，辐照在器件中引起的光电流约为2nA。辐照还会在器件引入累积损伤，导致器件的暗电流增加，并且在辐照结束后的十几分钟内不会发生恢复。当剂量率一定时，器件暗电流随着辐照剂量的增加而增大，但增大的速度趋于变缓。当总剂量一定时，器件接受的辐照剂量率越大，其暗电流的增加越多。

Abstract:

With the performance improvement of short wavelength infrared InGaAs detector for aerospace application, it is becoming more and more sensitive to irradiation damage. Real-time measurement was used to investigate the effect of γ irradiation with different dose and rate on the current-voltage characteristic of lattice-matched In0.53Ga0.47As detectors. The results indicate that the photocurrent induced by irradiation is about 2nA. Besides, the irradiation brings about cumulative damage which increases the dark current. No annealing of dark current was observed by about 10min after irradiation. With the accumulation of irradiation dose under certain dose rare, the increase of dark current slows down. Under the same dose, the larger the irradiation rate is, the more the dark current increases.