黑硅微结构光敏二极管

Black Silicon Microstructure Photodiodes

摘要:

与平面硅相比，黑硅对0.25~2.5μm波长光具有高吸收特性。为了提高硅光敏二极管的近红外灵敏度和响应时间，采用金属辅助刻蚀在光敏二极管探测器背面制作了黑硅微结构。在1064nm波长，探测器红外响应达到0.518A/W，比常规探测器量子效率提高了65%。

Abstract:

Black silicon shows higher absorption in 0.25~2.5μm wavelength range as compared to flat silicon. To improve NIR sensitivity and response speed of silicon photodiodes, an metal-assisted chemical etching（MCE）was used to form “black silicon” microstructures on the backside surface of photodiodes. At 1064nm , the photoresponsivity of the photodiodes reaches up to 0.518A/W and the quantum efficiency is 65% higher than that of conventional diodes.