一种提高SOI电光开关消光比的优化设计

Optimal Design for Extinction Ratio of SOI Electro-optical Switch

摘要:

针对电流注入型SOI光开关在切换时难以克服的消光比变差的问题,提出了一种非对称的开关结构设计.然后依照实际器件的结构建立了SOI光开关的3D光学模型,对光开关中3D光场传输和输出光功率进行了模拟与分析.最后运用该模型对SOI光开关在电流切换时的消光比变化的问题进行了比较深入的研究,计算结果表明,提出的非对称的开关结构可以将SOI电光开关的消光比提高5dB左右.

Abstract:

A new asymmetric structure design was proposed for the extinction ratio enhancement of a SOI optical switch employing carrier injection effect.A 3D-BPM model was established according to the actual device structure which can give the 3D full view of the optical-field distribution in the SOI optical switch.Using this model,detailed analysis was performed on the extinction ratio of the SOI electro-optical switch after current injection.It is indicated that the extinction ratio of the optical switch can be improved by 5dB by employing the asymmetric structure design.