InGaAs/InP盖革模式雪崩焦平面阵列的研制

Fabrication of InGaAs/InP Geiger-mode Avalanche Focal Plane Arrays

摘要:

设计制作了一种由InGaAs/InP雪崩光电二极管阵列与时间计数型CMOS读出电路组成的8×8阵列规格盖革模式雪崩焦平面阵列(GM APD FPA).雪崩光电二极管采用SAGCM结构,在盖革模式下工作具有单光子探测灵敏度;时间计数型CMOS读出电路在每个单元获取光子飞行时间,实现纳秒级的时间分辨率,并完成雪崩淬灭功能.测试结果表明,倒装混合集成的GM APD FPA器件暗计数率(DCR)均值为32.5kHz,单光子探测效率(PDE)均值为19.5%,单元时间抖动为465ps,实现了光脉冲时间信息的探测,验证了盖革模式雪崩焦平面阵列技术及其在三维成像中应用的可行性.

Abstract:

The 8×8 Geiger-mode avalanche photodiode focal plane arrays (GM APD FPA) which incorporated InGaAs/InP avalanche photodiodes and timing CMOS read-out integrated circuits were designed and manufactured.The avalanche photodiodes have a separate absorption,grading,charge and multiplication region structure (SAGCM) with single photon sensitivity in Geiger-mode.The timing CMOS read-out integrated circuits perform avalanche quenching and time-of-flight measurements for each pixel with a temporal resolution of nanosecond.The hybrid-integrated GM APD FPA achieves an average dark count rate of 32.5kHz ,and average single photon detection efficiency of 19.5%,while the timing jitter for single pixel is 465ps.The detection of temporal information of pulse laser is successfully demonstrated.The feasibility of Geiger-mode avalanche photodiode focal plane arrays and their applications in 3D imaging have been validated.